High-isolation, low-loss RF switch operates up to 8000MHz

Article By : Integrated Device Technology

The IDT F2932 and F2933 devices are silicon-based, single-pole, double-throw (SPDT) switches geared for communications and public safety systems, radar and general purpose switching.

Integrated Device Technology (IDT) has unleashed a couple of high-isolation, low-loss, high linearity broad band RF switches aimed at communications and public safety systems, radar and general purpose switching. The IDT F2932 and F2933, operating from 50MHz to 8000MHz, are silicon-based, low-distortion 50ohm single-pole, double-throw (SPDT) switches.

The devices are offered in industry-standard 4mm x 4mm 16-pin QFN packages. At 4GHz the F2932 and F2933 deliver: high isolation of 66dB; low distortion of 64dBm IIP3 at 15dBm tones, 1MHz channel spacing; insertion loss of 0.93dB; and P1dB of >35dBm.

The inherent benefits over most competitive products, particularly when compared to typical GaAs-based switches, are: better RF performance, greater reliability, easier integration and lower total solution cost, detailed the company.

F2932 and F2933 offer similar RF performance, pin out and control, with the F2932 having an additional enable/disable feature allowing all RF paths to be put into an off state and disabling the VCTL feature.