Flash memory delivers 54Mbps read bandwidth

Article By : Cypress Semiconductor

Cypress' 128Mb and 256Mb FL-L Quad SPI NOR Flash devices increase manufacturing throughput with 0.30ms program time per 256bytes and 50ms erase time.

High-performance system designs require high read bandwidth for program execution, small, low-pin-count packages and fast program and erase times. Cypress' 128Mb and 256Mb FL-L Quad SPI NOR Flash devices are each capable of 133MHz Single Data Rate (SDR) and 66MHz Double Data Rate (DDR) for bandwidth of 67Mbps, while the 64Mb devices leverage a 54MHz DDR mode to deliver read bandwidth of 54Mbps, enabling fast program execution for high-performance systems.

The FL-L NOR Flash devices with a Quad Serial Peripheral Interface (Quad SPI) provide the reliability and security for high-performance embedded systems that store critical data and operate at extended temperatures. The memories provide low standby current and a deep-power-down mode that extends battery life for battery-powered applications. The family offers AEC-Q100 automotive qualification and supports an extended temperature range of -40°C to 125°C.

The 128Mb and 256Mb devices can increase customers' manufacturing throughput with 0.30ms program time per 256bytes and a 50ms erase time that enables new data to be written quickly. The devices are available in industry-standard packages including the USON (4mm x 4mm) package that saves board space and simplifies layout.

Using small, uniform 4KB physical memory sectors allows the devices to store program code and parametric data. Thus, the devices are used for high-performance applications, such as Advanced Driver Assistance Systems (ADAS), automotive instrument clusters and infotainment systems, industrial control and smart factory equipment, networking equipment, IoT applications, video game consoles and set-top boxes.