Compact switch promises more power-efficient RF designs

Article By : Analog Devices

The ADRF5130 from ADI is specified at 0.7GHz to 3.5GHz frequency band with typical 0.6dB insertion-loss, isolation of 50dB and linearity of 68dBm aimed at cellular radio systems.

Analog Devices (ADI) has rolled out what it describes is a high-power, single-pole, double-throw (SPDT) silicon switch that boasts peak power handling up to 44W during continuous operation mode. According to the company, the ADRF5130 allows designers to minimise hardware size and bias power consumption in cellular radio systems.

As the next generation of communications infrastructure moves toward higher data capacity, cellular radio front ends must scale down in size and provide faster speeds to meet the demands of increased data usage. ADI's ADRF5130 switch meets these requirements through a high level of integration that eliminates the need for external components, the company said.

[Silicon switch]

The switch also reduces power consumption to more efficient levels by operating on a single low-voltage supply with extremely low current consumption compared to existing pin-diode-based solutions. The ADRF5130 is manufactured using silicon technology, and is housed in a 4mm x 4mm LFCSP SMT package.

The ADRF5130 is specified at 0.7GHz to 3.5GHz frequency band with typical 0.6dB insertion-loss, high isolation of 50dB and excellent linearity of 68dBm, the company noted. The device features robust 2kV electro-static-discharge (ESD) protection on all device pins. It also incorporates a fast CMOS-compatible control interface with switching time less than 1μs. Additionally, a symmetrical circuit architecture allows the RF inputs to be used interchangeably in high power applications.

The ADRF5130BCPZ will be in full production by July 2016, available for $10.04 each per 1,000 pieces. Samples and production details of the ADRF5130-EVAL-Z are to be announced, but is pegged at $99 per unit.

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