WBG semiconductors are critical to the development of next-generation space-borne systems thanks to advantages like insensitivity to radiation and high-temperature…
With 5G, the complexity of RF front-end modules is increasing at a bewildering pace. More antennas, more PAs, more filters…
The investments includes $400m strategic investments in the Agrate fab; and GaN and 200mm SiC wafer capacity.
Silicon Carbide is being adopted in several power applications. The agreement between ROHM and STMicroelectronics will increase its massive adoption…
Using silicon carbide gate drivers can reduce energy loss by 30 percent while maximizing system uptime.
A shortage of silicon carbide wafers is frustrating the growing demand for SiC power devices, but capacity is being added.
Leveraging SiC, EV charging will switch into high gear when stored power can be returned to the network as needed…
Effective high-power, compact AC adapters can be built using SiC, GaN, and Si super junction devices, according to an analysis…
Agreement to boost commercial expansion of SiC in automotive and industrial applications
Creating accurate models for Wide Band Gap (WBG) power devices representing their complete behavior is vital to the system simulation…