GaN-on-Diamond To Play A Role in Future Power Devices
Integrating GaN with other materials is a challenge, but several organizations are exploring ways to bond diamond and GaN to…
ST Acquires a Majority Stake in GaN Company
With the acquisition of a majority stake in French gallium nitride innovator Exagan, STMicroelectronics expands beyond silicon carbide.
Next-Gen Space-Borne Systems Call for WBG Semiconductors
WBG semiconductors are critical to the development of next-generation space-borne systems thanks to advantages like insensitivity to radiation and high-temperature…
ST Plans $1.5B Investment
The investments includes $400m strategic investments in the Agrate fab; and GaN and 200mm SiC wafer capacity.
Improving Efficiency with SiC Isolated Gate Drivers
Using silicon carbide gate drivers can reduce energy loss by 30 percent while maximizing system uptime.
GaN to Power Super-Fast Chargers
Navitas’ next-generation gallium nitride (GaN) power ICs enable 3x faster charging and achieve mainstream adoption in mobile fast-chargers, addressing a…
Silicon III-V Chips Needed to Enable 5G Devices
Some low-power IoT sensors will be combined with wireless RF, yet they must be cheap. That suggests combining silicon CMOS…
Could GaN Be the ‘Green’ Technology That Drives EV?
Devices with GaN or SiC are gradually replacing their silicon-based counterparts.
Blog: GaN, SiC or Si?
Effective high-power, compact AC adapters can be built using SiC, GaN, and Si super junction devices, according to an analysis…
GaN MicroLEDs Developed for Large TVs
The research institute has devised a gallium nitride (GaN) microLED that is simpler in construction than other LEDs commonly used…