2020-04-09 - Maurizio Di Paolo Emilio

GaN-on-Diamond To Play A Role in Future Power Devices

Integrating GaN with other materials is a challenge, but several organizations are exploring ways to bond diamond and GaN to…

2020-03-12 - M. Di Paolo Emilio

ST Acquires a Majority Stake in GaN Company

With the acquisition of a majority stake in French gallium nitride innovator Exagan, STMicroelectronics expands beyond silicon carbide.

2020-03-05 - M. Di Paolo Emilio

Next-Gen Space-Borne Systems Call for WBG Semiconductors

WBG semiconductors are critical to the development of next-generation space-borne systems thanks to advantages like insensitivity to radiation and high-temperature…

2020-01-30 - Nitin Dahad

ST Plans $1.5B Investment

The investments includes $400m strategic investments in the Agrate fab; and GaN and 200mm SiC wafer capacity.

2019-12-20 - M. Di Paolo Emilio

Improving Efficiency with SiC Isolated Gate Drivers

Using silicon carbide gate drivers can reduce energy loss by 30 percent while maximizing system uptime.

2019-12-19 - M. Di Paolo Emilio

GaN to Power Super-Fast Chargers

Navitas’ next-generation gallium nitride (GaN) power ICs enable 3x faster charging and achieve mainstream adoption in mobile fast-chargers, addressing a…

2019-10-28 - M. Di Paolo Emilio

Silicon III-V Chips Needed to Enable 5G Devices

Some low-power IoT sensors will be combined with wireless RF, yet they must be cheap. That suggests combining silicon CMOS…

2019-09-26 - M. Di Paolo Emilio

Could GaN Be the ‘Green’ Technology That Drives EV?

Devices with GaN or SiC are gradually replacing their silicon-based counterparts.

2019-07-17 - Sinjin Dixon-Warren

Blog: GaN, SiC or Si?

Effective high-power, compact AC adapters can be built using SiC, GaN, and Si super junction devices, according to an analysis…

2019-05-20 - Nitin Dahad

GaN MicroLEDs Developed for Large TVs

The research institute has devised a gallium nitride (GaN) microLED that is simpler in construction than other LEDs commonly used…